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Bienvenue dans la collection HAL du groupe CS : Convertisseurs Statiques
Nos activités de recherche couvrent les problématiques principales de la conversion d’énergie électrique et reposent sur la combinaison d’approches théoriques et expérimentales autour de la notion de cellule de commutation.
Le groupe s’est spécialisé dans l’étude de nouvelles structures de convertisseurs multicellulaires de moyenne et de forte puissance (du kW au MW) mettant en jeu des agencements originaux des cellules de commutation imbriquées séries, superposées parallèles et la parallélisation globale ou partielle par des dispositifs innovants de couplages magnétiques.
Types de documents publiés
Sujets
Robustness
Voltage control
Traction power supplies
Gate-Damage
IGBT
Aerospace
SiC Mosfet
Monolithic integration
Rail transportation power systems
Harmonic interactions
Short-Circuit
Fuel cell
Current Mode
MOSFET
Coupled inductors
DC-DC power converters
Fuel cells
InterCell Transformer ICT
Wide band gap semiconductors
Intercell transformers
Design
Elemental semiconductors
Power Converter Design
Silicon compounds
Thyristor
Power convertors
DC-DC power convertors
Power MOSFET
Power conversion
Dielectric Barrier Discharge
Electric Discharge Power Supply
Busbars
Gate-Aging
Power electronics
Bridge circuits
Excimer Lamp
Railway electrification
Traction
Diamond
Efficiency
Renewable energy
Gate-Driver
Insulated gate bipolar transistors
Failure-Mode
Hydrogen
Electrolyzer
Inverter
Buck converter
GaN
Driver circuits
SiC MOSFET
Optimisation
Optimization
Multilevel converters
Silicon Carbide SiC
Current mode converter
Multilevel converter
CMOS
Decentralized control
Fault tolerance
Zero voltage switching
Silicon
Rail transportation
MOSFET circuits
Self-switching
Electronique de puissance
Switching frequency
SiC MOSFETs
MOSFET SiC
Cellule de commutation
Switching convertors
Photovoltaic hybrid system
Power integration
HEMT GaN
Static converter
Device simulation
Choppers circuits
3D finite elements method
Power Converters
AC-DC multilevel converter
Current mode
Medium voltage
Switching losses
Silicon carbide
Modelling
Active Gate Driver
Capacitors
Switches
Ultra Violet Generation UV
Short-circuit
Skin effect
Court-circuit
Railways
Power converter
Wide bandgap semiconductors
Interleaved converters
DBD
Substations
Reliability
2D physical simulation
Derniers dépôts
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Louis Alexis Gomez, Luis Gabriel Alves Rodrigues, Guillaume Gateau, Sébastien Sanchez. Characterization of 3.3 kV Discrete SiC MOSFETs in Synchronous Rectification Mode for PV Current Source Inverter Applications. PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2022, Nuremberg, Germany. pp.DOI:10.30420/565822037, ⟨10.30420/565822037⟩. ⟨hal-04283919⟩
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L. Ghizzo, G. Guibaud, C. de Nardi, F. Jamin, V. Chazal, et al.. Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩. ⟨hal-04307540⟩