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Band Gap of Pb(Fe0.5Nb0.5)O-3 Thin Films Prepared by Pulsed Laser Deposition

Abstract : Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O-3 (Pb,La)(Zr,Ti)O-3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/mu m to 35 S/mu m during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.
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Soumis le : vendredi 1 avril 2022 - 10:45:14
Dernière modification le : samedi 2 avril 2022 - 03:00:20

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Nicole Bartek, Vladimir V. Shvartsman, Houssny Bouyanfif, Alexander Schmitz, Gerd Bacher, et al.. Band Gap of Pb(Fe0.5Nb0.5)O-3 Thin Films Prepared by Pulsed Laser Deposition. Materials, 2021, 14 (22), ⟨10.3390/ma14226841⟩. ⟨hal-03627228⟩



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