Conduction mechanism and switchable photovoltaic effect in (111) oriented BiFe0.95Mn0.05O3 thin film - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2019

Conduction mechanism and switchable photovoltaic effect in (111) oriented BiFe0.95Mn0.05O3 thin film

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Résumé

Epitaxial 200 run BiFe0.95Mn0.05O3 (BFO) film was grown by pulsed laser deposition (PLD) on (1 1 1) oriented SrTiO3 substrate buffered with a 50nm thick SrRuO3 electrode. The BFO thin film shows a rhombohedral structure and a large remnant polarization of Pr = 104 mu C cm(-2). By comparing I(V) characteristics with different conduction models we reveal the presence of both bulk limited Poole-Frenkel and Schottky interface mechanisms and each one dominates in a specific range of temperature. At room temperature (RD and under 10 mW laser illumination, the as grown BFO film presents short-circuit current density (J(sc)) and open circuit voltage (V-oc) of 2.25 mA cm(-2) and -0.55 V respectively. This PV effect can be switched by applying positive voltage pulses higher than the coercive field. For low temperatures a large V-oc value of about -4.5 V (-225 kV cm(-1)) is observed which suggests a bulk non-centrosymmetric origin of the PV response.

Dates et versions

hal-03627238 , version 1 (01-04-2022)

Identifiants

Citer

J. Belhadi, J. Ruvalcaba, S. Yousfi, M. El Marssi, T. Cordova, et al.. Conduction mechanism and switchable photovoltaic effect in (111) oriented BiFe0.95Mn0.05O3 thin film. Journal of Physics: Condensed Matter, 2019, 31 (27), ⟨10.1088/1361-648X/ab157e⟩. ⟨hal-03627238⟩
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