Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe0.95Mn0.05O3 thin film

S. Yousfi (1) , H. Bouyanfif (2) , M. El Marssi (2)

1 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
2 LPMC - Laboratoire de Physique de la Matière Condensée - UR UPJV 2081

The photovoltaic (PV) response of an epitaxial BiFe0.95Mn0.05O3 thin film grown using pulsed laser deposition has been investigated on a broad range of temperature. The wavelength dependent photovoltaic effect shows the contribution of the manganese doping and the presence of vacancies (Bi and O vacancies). The temperature dependent response of the PV response rules out electromigration and/or Schottky barriers as dominant mechanisms. This is corroborated with the observed switchable photovoltaic effect that can be explained either by the depolarizing field or by the bulk photovoltaic effect. In addition, the PV response shows a strong correlation with the low temperature polaronic-like conduction mechanism, and a high open circuit voltage (2.5V) is detected in the investigated vertical capacitive geometry. Published by AIP Publishing.

Domaines: Matière Condensée [cond-mat]

S. Yousfi, H. Bouyanfif, M. El Marssi. Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe0.95Mn0.05O3 thin film. Journal of Applied Physics, 2017, 122 (21), ⟨10.1063/1.5002643⟩. ⟨hal-03627241⟩