Oxygen-deficient GdK2Nb5O15 ferroelectric epitaxial thin film

B. Allouche (1) , Y. Gagou (2) , F. Le Marrec (2) , M. -A. Fremy (3) , M. El Marssi (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LPMC - Laboratoire de Physique de la Matière Condensée - UR UPJV 2081
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The ferroelectric compound GdK2Nb5O15 (GKN) thin film with tetragonal-tungstenbronze-type structure was grown by pulsed-laser deposition on (001) SrRuO3/La0.5Sr0.5CoO3/MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transition temperature in the GKN thin film was shifted to high temperatures due to substrate-induced stress. Impedance spectroscopy investigations show Maxwell-Wagner-type conduction at low frequencies, which leads to resistive switching. Oxygen vacancies and temperature effects were studied to highlight the stability of the resistive switching behavior in the GKN thin film. Copyright (C) EPLA, 2016

Domaines: Matière Condensée [cond-mat]

B. Allouche, Y. Gagou, F. Le Marrec, M. -A. Fremy, M. El Marssi. Oxygen-deficient GdK2Nb5O15 ferroelectric epitaxial thin film. EPL - Europhysics Letters, 2016, 116 (6), ⟨10.1209/0295-5075/116/67001⟩. ⟨hal-03627584⟩